CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

With the development of bioelectronics, brain-inspired artificial synapses become more and important. To simulate synapse, a HfAlO ferroelectric tunnel junction (FTJ) was fabricated, which can short-term synaptic plasticity for neuromorphic computing. The devices realize function with low power consumption about 7.15 aJ per event. Moreover, to explore effect oxygen defects on properties HfAlO-based device, first-principle analysis further carried out. These results pave way hafnium-based devices.